全固源分子束外延1.55μm波段应变补偿InAsP/InGaP多量子阱材料

Strain-Compensated InAsP/InGaP Multiple Quantum Well Grown by Solid Source Molecular Beam Epitaxy

利用新型全固源分子束外延技术 ,对 1.5 5 μm波段应变补偿InAsP/InGaP多量子阱材料的生长进行了研究。在InAsP阱和InGaP垒之间插入InP中间层以减小阱和垒之间较大的剪切力。通过对生长材料的X射线衍射摇摆曲线和室温光致荧光光谱的比较 ,优化生长参数 ,获得了高质量的InAsP/InP/InGaP/InP应变补偿多量子阱结构 ,阱、垒、中间层的厚度分别为 7.1,6.0 ,1.9nm的 7个周期的应变补偿多量子阱材料室温光荧光谱半高全宽为 18.2meV ,是当前文献报道的 1.5 5 μm波段的InAsP多量子阱材料的最好结果之一。

The growth of 1.55 μm-wavelength-range strain-compensated InAsP/InP/InGaP/InP MQW structures were investigated by solid-source molecular beam epitaxy (SSMBE) using valved cracker cells. Intermediate InP of several monolayers is inserted between the InAsP well and the InGaP barrier to improve the structure quality. High quality InAsP/InP/InGaP/InP MQWs are grown by SSMBE. The thickness of well, barrier and intermediate InP is 7.1, 6.0 and 1.9 nm, respectively. The full-width at half-maximum (FWHM) of photoluminescence (PL) is 18.2 meV at room temperature, which is among the best reported to date for 1.55 μm-wavelength InAsP MQW structure.