基于GaN的太拉赫兹负微分电阻振荡器

GaN Negative-Differential-Resistivity Oscillator for Terahertz Range

在闪锌矿结构的GaN中 ,载流子在Γ能谷中反射能够引起负微分电阻效应。基于这种机制的GaNn+ nn+ 振荡器的自振荡频率在太拉赫兹范围内。从理论上仔细研究了这种振荡器内部电场畴的动态变化以及振荡频率对振荡器两端所加电场的依赖关系 ,并预言了利用GaN负微分电阻振荡器作为可调谐太拉赫兹源的理论可能性。

Inflection of carriers in the Γ valley, prior to the usual intervalley scattering, can cause the well-known negative differential resistance (NDR) in zinc-blende (Zb) GaN. GaN n^+n n^+ oscillators based on this mechanism have a self-oscillating frequency in the terahertz (THz) range. The electric domain dynamics and the self-oscillation frequency dependence on the applied dc field by the drift-diffusion model were studied carefully. The potential application of GaN Gunn diodes as tunable oscillators working in the THz regime was predicted.