摘要
概述了微区电阻测试方法及其均匀性表征方法的应用 ,利用自主研制的斜置式方形四探针微区薄层电阻测试仪 ,对P型硅芯片进行了无图形Rymaszewski法测试 ,在 3寸芯片上测试了 5 98个 3 66μm× 3 66μm方形微区的薄层电阻 ,并用等值线图表示了其分布 ,得到了薄层电阻的不均匀度及平均值 ,这种微区薄层电阻表示方法适用于评价材料质量及改进制造工艺。
A modified probe technique of rymaszewski method is used for measuring the sheet resistance of a silicon wafer with the equipment made by our laboratory of square four point probes after summarizing the measurement method of sheet resistance and the application of equal-value-line maps. 598 square microareas of 366 μm× 366 μm micron were chosen to be tested in a 3 inch p-type silicon wafer. It is expressed in an equal-value-line maps. Then the uniformity and average value of the sheet resistance are obotained. This kind of technique seems to be more suitable to evaluate the material quality and improve the manufacture technics.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第3期594-597,共4页
Chinese Journal of Rare Metals
基金
国家自然科学基金资助项目 ( 692 72 0 0 1)
河北省自然科学基金资助项目 ( 60 2 0 76)
天津市自然科学基金资助项目( 0 13 60 2 0 11)
