X波段单片低噪声放大器芯片

X-Band Microwave Monolithic Integrated Circuit Low Noise Amplifier Chip

报道了X波段 0 .5 μmGaAsPHEMT全单片低噪声放大器芯片。该放大器芯片由四级级联放大电路构成。芯片面积为 2 .43× 1.85mm2 。该放大器芯片在通带内测试结果为 :在工作条件VD=5V(ID≤ 10 0mA)下 ,增益 >2 6dB ,噪声系数≤ 2 .2dB ,输入、输出电压驻波比 <1.6∶1,平坦度≤± 1dB ,1dB压缩功率≥ 15dB·m ,相位一致性≤± 3°,幅度一致性≤± 0 .5dB。芯片尺寸为 2 .43mm× 1.85mm。

This paper reports a kind of 0.5 μm GaAs PHEMT X-band four-stage fully monolithic low noise amplifier chip. Across the 9.0～10.3 GHz frequency band, the LNA chip has noise figure better than 2.0 dB, linear gain more than 26 dB, gain flatness less than ±1 dB, input and output VSWRs less than 1.5∶1, and 1 dB gain compression output power greater than 15 dBm. The consistencies of amplitude and phase of the LNA chips are less than ±0.5 dB and (±3°) at the corresponding frequency points, respectively. The chip size is 2.43 mm×1.85 mm.