用于1.44μm半导体激光器的GaInAs/InGaAsP量子阱结构的设计

Design of GaInAs/InGaAsP Quantum Wells for 1.44 μm Semiconductor Lasers

采用有效质量模型下的 4× 4Luttinger Kohn哈密顿量矩阵对GaxIn1 -xAs/In0 .80 Ga0 .2 0 As0 .4 4P0 .56 /InP量子阱结构进行了能带计算 ,求得了该量子阱结构跃迁能量随组份及阱宽的变化关系 ,从而得到了激射波长 1.44 μm时的Ga组份x与阱宽Lw(在 5～ 10nm内取值 )的相互关系 :x=0 .3 2 0 13 +0 .0 60 93Lw-0 .0 0 5 3 4Lw2 +0 .0 0 0 17483Lw3,当阱宽为 5～ 10nm ,因而Ga组份为 0 .5 1～ 0 .5 7时 ,阱材料中产生的张应变量为 :0 .2 9%～ 0 .70 %。最后 ,我们计算了该量子阱结构的能量色散关系和光增益谱 ,从而对x与Lw 组合值进行优化。

The Transition Energy of Ga_xIn_(1-x)As/In_(0.80)Ga_(0.20)As_(0.44)P_(0.56)/InP quantum well structures was calculated by using 4×4 Luttinger-Kohn Hamiltonian matrix under effective mass frame. The variation of transition with Ga composition x and well width L_w is presented. A formula describing the relation of Ga composition x and well width L_w(5 nm≤L_w≤10 nm) is obtained, x=0.32013 + 0.06093L_w-0.00534L_w^2+0.00017483L_w^3, by which the emission wavelength of the quantum well lasers maintain at 1.44 μm. This formula shows that if the well width is 5～10 nm and Ga composition is 0.51～0.57, the tension strain in well is 0.29%～0.70%. Finally, the energy dispersion relation and optical gain spectra of the quantum well structures is presented, and thus the parameters x and L_w are optimized.