富Sb状态下GaSb/AlGaSb异质结的液相外延生长

LPE GROWTH OF GaSb/ Al_xGa_(1-x)Sb HETERO JUNCTION STRUCTURE IN THE Sb-RICH REGION

本文分析了以往在制作GaSb/Al_xGa_(1……x)Sb结构雪崩光电二极管(APD)中存在的问题,提出了在富Sb状态下进行液相外延(LPE)生长GaSb/AlGaSb异质结APD的方法。经过多次试验获得了在富Sb状态下Al-Ga-Sb三元系相图数据,并且在富Sb状态下液相外延生长出了优良的AlGaSb外延层。

The Problems in the early fabrication of GaSb/ AlGaSb heterojunction structure avalanche photodiodes are analysed. A way of LPE growth of GaSb/ AlGaSb heterojunction structure APD is proposed. The phase diagram data of Al- Ga- Sb ternary system in the Sb- rich region have been determined by the experiment. The AlGaSb epilayers with good surface morphology have been obtained from Sb- rich solutions with the way of liquid phase epitaxy.