集成电光器件电极的数值分析法

NUMERICAL ANALYSIS OF ELECTRODES IN INTEGRATED OPTRONIC DEVICES

本文描述了一种数值分析方法,计算了集成光学中电光器件电极的电场分布。在电极无限薄的假设条件下,把数值分析法计算的结果同保角变换法的结果进行了比较,并讨论了电极厚度和缓冲层对电场以及特征参量的影响。计算结果表明电极厚度对电场分布影响较小,但特征阻抗和有效介电常数随电极厚度增加明显减小。而且使用缓冲层使波导的有效深度增加,电场强度减小,特征阻抗和有效介电常数都发生很大变化。利用这些特性可对集成光学电光器件的电极进行优化设计。

In this paper, a numerical computational method for calculation of electric-field distribution of the electrodes in integrated-optics electrooptic devices is described. Under the assumption of infinitely thin electrodes, comparisons between numerical computational results and conformal mapping ones are (made.jThe effect of the electrode and buffer layer thickness on the electric-field and characteristic parameters are calculated and discusesd. The calculated results show that the electric-field in the substrate is slightly influenced by the electrode thickness, while the characteristic impedance and effective dielectric constant are decreased as the electrode thickness is increased and the electric-field in the substrate and the effective dielectric constant is decreased. The characteristic impedance is increased as the buffer layer is used. These properties may be useful to design the electrode of integrated-optics electrooptic devices optimally.