摘要
对设计并制作的[M_gF_2+(ZrO_2/SiO_2)]膜系·LiNbO_3·ITO/玻璃结构的MSLM用调制组件的综合电光性能进行了实验测定。结果表明,其反射半波电压V_(πR)为1.2kV±0.1kV,反射率达99％,峰值次级电子发射系数为5.8。用其制作的光导址MSLM具有良好的功能与性能。
A designed and fabricated [MgF2+(ZrO2/SiO2)] film · LiNbO3 plate · ITO film/glass window structure, which will be used in a microchannel spatial light modulator as a complete electro-optic modulation assembly, has been electrically and optically characterized. The experimental results indicate that the reflective half-wave voltage KπR is 1.2± 0.1kV, reflectivity is 99% (633nm) and the peak value of secondary electron emission spectroscopy reaches 5.8. The functional experiments of a prototype MSLM device built with it show that this assembly has good electrical and optic properties.
出处
《光子学报》
EI
CAS
CSCD
1993年第4期332-336,共5页
Acta Photonica Sinica
关键词
反射谱
MSLM
光调制器
电光调制
Optic modulation
Reflection spectroscopy
Secondary electron emission
