离子束刻蚀技术研究

A study on ion beam etching technique

本文介绍了离子束刻蚀技术的原理,讨论了刻蚀速率与离子束流密度、离子能量和离子束入射角度的关系。实验结果与理论分析有较好的一致性。

In this paper, the principles of ion beam etching technique are briefly described. The relations between the etching rate and the ion energy, and the density of ion beam current, and the incident angles of ion beam are discussed. And they are consistent with the theoretical analyses.