多晶硅压力传感器灵敏温度系数自补偿技术研究

A Study on the Temperature Coefficient of Sensitivity Self-compensation Technology of Polysilicon Pressure Sensor

介绍了硅压力传感器的灵敏温度系数补偿原理 ,给出了一种在宽温度范围内采用二次补偿灵敏度温度系数的方法 ,实现了宽范围较高的补偿精度。具体方案是把压阻式惠斯登电桥与温度传感器、可微调多晶硅电阻集成在一个芯片上 ,通过优化多晶硅电阻的掺杂浓度和改变激励源的温度特性 ,从而实现对多晶硅压力传感器灵敏温度系数的二次补偿作用。经补偿 ,传感器的灵敏温度系数小于 - 1.5× 10 - 4/℃ ,该方法的补偿温度范围为 2 0℃～ +15 0℃ ,通用性强。

The principle of temperature coefficient of sensitivity self-compensation technology is introduced. Using twice self-compensation in wide temperature range, a method of sensitivity temperature self-compensation was put forward. A relatively precise self-compensation in wide temperature range is accomplished. The scheme of twice self-compensation is realized by integrating Wheatstone bridge, temperature sensor and adjustable polysilicon resistor on a chip, and optimizing the doping concentration of polysilicon pressure sensor to realize the self-compensation of out-put drifting, and regulating the temperature characteristic of the current source. The temperature coefficient of sensitivity of the pressure sensor are effectively compensated to less than 1.5×10 -4 /℃, showing wide compensating range(20 ℃～+150 ℃) and good compatibility.