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GaN HFET研究的最新进展

New developments in GaN HFETs
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摘要 综述了GaNHFET研究中材料生长和工艺研究的新进展,介绍了器件向高频、大功率方向发展的现状及其应用前景,总结了优化器件性能和商品化问题中的二维场结构和电子态、纳米金属介质层、应变能带工程及介质势垒等重要课题。 New developments in the growth,fabrication and performance of Ⅲ-nitride heterojunction field effect transistor(HFET)structures and devices are summarized in this paper. The new trends in developing high power high frequency HFETs and device commercializing are emphasized,sum and up some problems in performance optimization and commercialization of GaN HFET such as two dimensional electric field and electron states,nanometer metal and dielectric layers,strain energy band engineering,and dielectric potential barrier,etc.
作者 薛舫时
机构地区 南京电子器件研究所
出处 《微纳电子技术》 CAS 2004年第9期1-13,共13页 Micronanoelectronic Technology
关键词 GAN HFET 二维场结构和电子态 纳米金属介质层 应变能带工程 介质势垒 GaN HFET two dimensional electric field and electron states nanometer metal and dielectric layers strain energy band engineering dielectric potential barrier
分类号 TN386 [电子电信—物理电子学]
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参考文献61

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二级参考文献17

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微纳电子技术
2004年 第9期

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