摘要
介绍了集成电路TCAD虚拟工厂系统Taurus Workbench,基于CMOS工艺的特点,在TaurusWorkbench环境下进行了深亚微米级n沟器件的核心参数优化。优化结果印证了新的工艺条件对器件特性的改善。
The integrated circuit TCAD virtual factory system Taurus Workbench is introduced. Based on process characteristics of CMOS,optimization of key core parameters for deep submicron n-channel MOS devices with the Taurus Workbench is discussed. Results from the experiments show that the new process conditions help to improve the device performance.
出处
《微纳电子技术》
CAS
2004年第9期44-48,共5页
Micronanoelectronic Technology