期刊文献+

高温闪烁晶体Ce:YAP中的小角度晶界 被引量:5

Low-angle Boundary in High-temperature Scintillating Crystal Ce:YAP
下载PDF
导出
摘要 通过腐蚀形貌和XRD摇摆曲线,观察到了垂直和平行于Ce:YAP[010]方向的两组晶面内存在的小角度晶界(镶嵌结构间界),根据SEM形貌估算出(010)面内小角晶界的夹角为51”;四晶XRD摇摆曲线的结果表明,平行于[010]向的晶面内小角晶界的夹角为58”;摇摆曲线的半峰宽为54”,根据Darwin理论算出理想晶体的半峰宽为17”,并由此分析了晶体的完整性. Two kinds of low-angle boundary (mosaic structure) in Ce:YAP were observed by etching figures and rocking-curve. From SEM figure, the boundary angle on (010) plane estimated is 51'. The rocking-curve by four-crystal high-resolution XRD shows that the boundary angle on the plane paralleled with [010] is 58'. The FWHM (Full Width-Half Maximum) of rocking-curve is 54', and the one of ideal YAP crystal calculated out is 17' according to Darwin's theory. The integrality of Ce:YAP sample was analyzed on the basis of these result.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2004年第5期1186-1190,共5页 Journal of Inorganic Materials
关键词 Ce:YAP晶体 闪烁晶体 小角晶界 Ce : YAP crystal scintillating crystal low-angle boundary
  • 相关文献

参考文献16

  • 1[1]Neuroth G, Walrafen F. J. Crystal Growth, 1999, 198/199: 435-439.
  • 2[2]Wojtowicz A J, et al. J. Phys. Condens. Matter., 1998, 10: 8401-8415.
  • 3[3]Vittori F, et al. Nucl. Phys., B, 1998, 61B: 638-643.
  • 4[4]Kapusta K, et al. Nucl. Instr. And Meth., A, 1999, 421: 610-613.
  • 5[5]Suzuki M, et al. Nucl. Instr. Meth. Phys. Res., A, 2001, 467-468: 1121-1124.
  • 6[6]Baryshevsky V G, et al. J. Phys: Condens. Matter., 1993, 5: 7893-7902.
  • 7[7]Tomiki T, Ishikawa H, et al. J. Phys. Soc. Jpn., 1995, 64 (11): 4442-4449.
  • 8[8]Baccaro S, Blazek K, et al. Nucl. Instr. And Meth., A, 1995, 361: 209-215.
  • 9[9]Mosaynski M, Glodo J, et al. Nucl. Instr. And Meth., A, 1998, 404: 157-165.
  • 10[10]Weber M J, et al. Applied Physics Lettes, 1969, 15: 342-345.

同被引文献52

  • 1唐慧丽,董永军,徐军,吴锋.ScAlMgO_4晶体的生长缺陷[J].硅酸盐学报,2008,36(5):689-693. 被引量:1
  • 2魏景谦,胡小波,王继扬,尹鑫,郭明,刘宏,刘耀岗,饶晓方,田玉莲.同步辐射白光形貌术观察LiTaO_3晶体中的小角晶界[J].人工晶体学报,2000,29(S1). 被引量:2
  • 3马丽丽,胡小波,张怀金,王继扬,赵守仁,田玉莲,朱佩平.Nd:LuVO_4晶体缺陷的研究[J].人工晶体学报,2005,34(2):238-241. 被引量:2
  • 4陈君,杨德仁,席珍强.铸造多晶硅晶界的EBSD和EBIC研究[J].太阳能学报,2006,27(4):364-368. 被引量:10
  • 5林明献.硅晶圆半导体材料技术[M].中国台北:全华科技图书股份有限公司,1990:30-32.
  • 6周秋敏 彭存尧.直拉<111>锗单晶中小角晶界的形成机构.稀有金属,1978,(4):1-5.
  • 7DASHEVSHY M Y,EIDENSON A M. Impurity effects on low-angle boundary formation in silicon single crystals [ J]. Kristall und Technick, 1979,14( 1 ) :29 - 36.
  • 8DASHEVSHYM Y,EIDENSON A M, KAZIMITROV N I, et al. Low-angle boundary formation in silicon single crystals [J]. Kristall und Technick ,1976,11 (7) :775 -781.
  • 9于永贵,张怀金,王继扬,胡小波,于浩海.Yb:GdVO_4晶体的缺陷研究[J].中国稀土学报,2007,25(4):494-499. 被引量:2
  • 10Song C,Hang Y,Xia C,et al.Characteristics of large-sized ruby crystal grown by temperature gradient technique.Opt.Mater.,2005,27(4):699-703.

引证文献5

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部