基于PECVD工艺的a-SiC_x∶H发光微腔的研究

Study on a-SiC_x∶H Microcavity Prepared by PECVD

以 PECVD为制备工艺 ,a-Si O2 ∶ H/a-Si∶ H为布拉格反射镜多层膜 ,a-Si Cx∶ H为中间腔体发光材料 ,制备垂直腔面的发光微腔。文章通过模拟确定了微腔的多层膜层数和排列顺序 ,并对微腔的发光特性进行了反射谱和荧光谱研究。结果表明 ,该微腔性能良好 ,能激射出半高宽为 9nm、波长为 743 nm的荧光峰 ,与设计值70 0 nm基本吻合。

A microcavity prepared by PECVD is proposed in this paper. Its distributed Bragg reflectors are composed of periodically stacked a-SiO_2∶H/a-Si∶H layers and the active layer is filled with a a-SiC_x∶H. The number and order of periodically stacked multilayers are determined through simulating. Reflectance and PL spectra are recorded on the sample prepared in the experiment. It is indicated the microcavity can emit a light with FWHM of 9 nm at 743 nm which is proximately consistent with the design wavelength of 700 nm.