摘要
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。通过选择不同的器件结构和工艺条件 ,得到了色敏器件对蓝紫光的响应 ,完成了全色波段硅双结型色敏器件的研制。
Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction. Purple-blue sensitivity of Si color sensor with double PN junction is gained through appropraite selection from different structures of devices and technology conditions, on the base of which a device for panchromatic wave band has been fabricated.
出处
《光电子技术》
CAS
2004年第3期159-162,168,共5页
Optoelectronic Technology
基金
湖北省科技厅攻关课题 (No.2 0 0 2 AA1 0 1 B0 6 )
关键词
双结型硅色敏器件
金色波段
结深
短路电流比
Si color sensor with double PN junction
panchromatic wave band
junction depth
short circuit current ratio
