摘要
通过对磁场中载流金属导体内电子或半导体内载流子的受力分析,以及它们和金属或半导体晶格之间的相互作用,阐明了安培力的经典微观起源。
The classical micromechanism of Ampere's force can be explained by analysing the forces on the electrons in a current-carrying metal conductor or on the carriers in a semiconductor and the interaction between the electrons and the crystal lattice of metal or between the carriers and the crystal lattice of semiconductor.
出处
《广西师范大学学报(自然科学版)》
CAS
1993年第1期8-13,共6页
Journal of Guangxi Normal University:Natural Science Edition
关键词
霍尔电场
洛仑兹力
迁移率
安培力
Hall electric field
Lorentz force
mobility
Hall mobility
hole