低分子聚硅烷CVD法制备β—SiC超细微粉

PREPARATION OF β-SiC ULTRAFINE POWDER FROM LOW-MOLECULAR POLYSILANE BY CVD

采用CVD工艺,以低分子聚硅烷为先驅体,Ar气为载气,制备SiC超细微粉。研究反应温度、载气流量、反应物浓度等工艺参数对SiC微粉性能的影响。通过脱碳、脱氧和结晶化处理等工艺,制备出粒径组成均匀(<0.1μm)、纯度高(含碳量30％。按质量计)、结晶好的β-SiC超细微粉。

SiC ultrafine powder was prepared by CVD with low-molecular polysilane (LPS)as precursor and Ar as carrier gas. The influences of reaction conditions such as reaction temperature, carrier gas flow and reactant content on the properties of SiC ultrafine powder were investigated. The β-SiC ultrafine powder with a uniform particle size distribution, a homogeneous structure and high purity is obtained through decarbonization, deoxidisation and crystallization.