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玻璃软化点温度的简易计算方法 被引量:1

Simplified Method for Calculating Softening-Point of Glass
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摘要 采用Excel添加趋势线的方法进行玻璃软化点温度的计算。与用最小二乘法进行线性拟合计算相比,该方法计算公式极少,简单易学,方便实用。 Comparing with least squares techniques, adopting the method of adding tendency chart by Excel in the linear fitting calculation of the experimental data of the glass softening-point can significantly simplify the procedures. The method with only a few formulas in the computing process is easily handled, convenient and practical.
作者 伍洪标
出处 《玻璃与搪瓷》 CAS 北大核心 2004年第4期41-43,共3页 Glass & Enamel
关键词 玻璃 性能测试 软化点温度计算 Glass Performance test Softening-point calculation
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  • 1华中工学院.算法语言.计算方法[M].人民教育出版社,1978..
  • 2刘彦斌.如何使用Office 2000(第1版)[M].机械工业出版社,1999..
  • 3伍洪标.玻璃软化点温度计算方法[J].玻璃,1988,(1):16-17.

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  • 1POLIANI E,SOMASCHINI C,SANGUINETTI S. Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H[J].Optics & Laser Technology,2009.31-33.
  • 2GALL S,BECKER C,LEE K Y. Growth of poly crystalline silicon on glass for thin-film solar cells[J].Journal of Crystal Growth,2010.1277-1281.doi:10.1016/j.jcrysgro.2009.12.065.
  • 3VAN GESTEL D,GORDON I,POORTMANS J. Metal induced crystallization of amorphous silicon for photovoltaic solar cells[J].Physics Procedia,2010.196-199.doi:10.1007/s12032-008-9123-6.
  • 4GAO X Y,FENG H L,LIN Q G. Study on the mechanism of rapid solid-phasere crystallization of hydrogenated amorphous silicon film by rapid thermal processing[J].Thin Solid Films,2010.4473-4476.
  • 5KANEKO T,WAKAGI M,ONISAWA K. Change in crystalline morphologies of polycrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition using SiF4 + H2 gas mixture at 350℃[J].Applied Physics Letters,1994,(14):1865-1867.doi:10.1063/1.111781.
  • 6XU GY,WANG T M,LI G H. Raman spectra of nanocrystalline silicon films[J].Chinese Journal of Semiconductors,2000,(12):1170-1176.doi:10.3321/j.issn:0253-4177.2000.12.005.
  • 7JIN J,YUAN Z J,HUANG L. Laser crystallization of amorphous silicon films investigated by Raman spectroscopy and atomic force microscopy[J].Applied Surface Science,2010.3453-3458.doi:10.1029/2010GL042980.
  • 8TEIXEIRA R C,DOI I,ZAKIA M B P. MicroRaman stress characterization of polycrystalline silicon films grown at high temperature[J].Materials Science and Engineering,2004.160-164.doi:10.1016/j.bbamem.2009.10.017.
  • 9MATSUDA A,MASHIMA S,HASEZAKI K. Preparation of stable and photoconductive hydrogenated amorphous silicon from a Xe-diluted silane plasma[J].Applied Physics Letters,1991,(6):2494-2496.doi:10.1016/j.anaerobe.2009.09.002.

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