AlGaN/GaN HEMT器件的高温特性

The Temperature Characteristics of AlGaN/GaN HEMT

研究了AlGaN/GaNHEMT器件在室温、100℃、200℃和300℃下的工作性能。当栅长为1μm时,器件的最大漏源电流和非本征跨导在室温下的数值为1.02A/mm和230mS/mm。温度升高到100℃时几乎没有变化,温度升高到300℃时,最大漏源电流和跨导分别下降到0.69A/mm和118.25mS/mm,下降的百分比分别为:67.6%和51.4%。

The characteristics of AlGaN/GaN HEMT at room temperature, 100℃?200℃和300℃ were reported. At room temperature, Its maximum transconductance and saturated current density were 230mS/mm and 1.02A/mm respectively. They didn't change at 100℃, at 300℃, its maximum transconductance & saturated current density respectively decreased to 0.69 A/mm和118.25mS/mm. The percentages of them were respectively 67.6% and 51.4%.