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多孔硅的应用研究进展 被引量:3

Progress of Application on Porous Silicon
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摘要 多孔硅是一种新型的纳米半导体光电材料 ,室温下具有优异的光致发光、电致发光等特性 ,易与现有硅技术兼容 ,极有可能实现硅基光电器件等多个领域的应用 .扼要论述了多孔硅在绝缘材料、敏感元件及传感器、照明材料及太阳能电池、光电器件以及作为合成其它材料的模板等多个领域内的应用进展情况 。 Porous silicon (PS) is a new kind of nanometer semiconductor electro-optic material with excellent properties, such as photoluminescence (PL), electroluminescence (EL) characteristics in room temperature. PS has the promising potential for application in multi-fields including electro-optic devices owing to its outstanding properties and being compatible easily with modern Si technology. The applications of PS as insulating materials, sensitive materials and sensors, illuminating materials and solar cell, optoelectronic devices and so-called materials assistantly synthesized with PS are introduced in the paper, and the prospect of PS is also discussed.
出处 《光电技术应用》 2004年第4期16-19,22,共5页 Electro-Optic Technology Application
关键词 多孔硅 应用 研究进展 porous silicon (PS) application progress
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  • 1姜涌明,隋德新,赵国骏,史永昶,施伟.壳聚糖固定化木瓜蛋白酶的研究[J].生物化学杂志,1993,9(4):470-474. 被引量:22
  • 2陶国良,李彦锋,卓仁禧.氨化大孔球状聚氯乙烯固定化木瓜蛋白酶的研究[J].应用化学,1993,10(2):9-12. 被引量:10
  • 3刘立建,卓仁禧.多孔硅球的活化和硅烷化[J].离子交换与吸附,1995,11(6):541-544. 被引量:9
  • 4钟战天,王大文,范越,李承芳.Si(100)—As表面钝化作用和氧吸附[J].Journal of Semiconductors,1990,11(2):104-110. 被引量:1
  • 5虞家琪 张新夷.发光学讲座[J].物理(连载),1990,(2).
  • 6[1]Loni A, Canham L T, Berger M G,et al. Porous Silicon multilayer optical waveguides.Thin Solid Films, 1996, 267:143~146
  • 7[2]Arrand H F, Benson T M, Loni A, et al. Self-aligned porous silicon optical waveguides.Electronics Letters, 1997,33(20): 1724~1725
  • 8[3]Maiello G, Monica S. La, Frrand A,et al. Light guiding in oxidised porous silicon optical waveguides.Thin Solid Films,1997,297: 311~313
  • 9[4]Vorozov N, Dolgyi L, Yakovtseva V,et al. High quality oxidised porous-silicon buried waveguides.Applied Physics Letters, 2001,78(20): 3003~3005
  • 10[5]Rossi A M, Amato G, Camarchia V,et al. Self-aligned oxidised porous silicon optical waveguides with reduced loss.Electronics Letters, 2000, 36(8): 722~723

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  • 1陈君,杨德仁,席珍强,阙端麟,关口隆史.铸造多晶硅中铜沉淀的电子束诱生电流[J].太阳能学报,2005,26(1):1-5. 被引量:5
  • 2陈金学,席珍强,吴冬冬,杨德仁.铸造多晶硅中铁的磷吸杂和氢钝化机理[J].Journal of Semiconductors,2005,26(8):1549-1552. 被引量:4
  • 3陈君,杨德仁,席珍强.铸造多晶硅晶界的EBSD和EBIC研究[J].太阳能学报,2006,27(4):364-368. 被引量:10
  • 4Boudaden J, Monna R, Loghmarti M, et al. Comparison of phosphorus gettering for different multicrystalline silicon [J]. Solar Energy Mater Solar Cells , 2002,72 : 381
  • 5Hassen M, Ben Jaballah A, Hajji M. Performance improvements of crystalline silicon by iterative gettering process for short duration and with the use of porous silicon as sacrificial layer[J]. Solar Energy Mater Solar Cells,2005, (87):493
  • 6Einhaus R, Duerinckx F, Van Kerschaver E, et al. Hydrogen passivation of newly developed EMC-multi-crystalline silicon[J]. Mater Sci Eng, 1999, (B58):81
  • 7Fujiwara K, Pan W, Sawada K, et al. Directional growth method to obtain high quality polycrystalline silicon from its melt[J]. J Crystal Growth, 2006, (292) : 282
  • 8Kozo Fujiwar, Yoshikazu Obinat, Toru Ujihar, et al. Grain growth behaviors of polycrystalline silicon during melt growth processes[J] J Crystal Growth,2004, (266) :441
  • 9Kozo Fujiwara, Pan Wugen, Noritaka Usami, et al. Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting[J]. Aeta Mater, 2006, (54) :3191
  • 10Nagashio K, Kuribayashi K. Growth mechanism of twin-related and twin-free facet Si dendrites[J]. Acta Mater,2005, (53) : 3021

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