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羟基喹啉铝的稳定性研究 被引量：2

STUDIES OF DEGRADATION OF 8-HYDROXYQUINOLINE ALUMINUM
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摘要 8-羟基喹啉铝(Alq3)是一种非常重要的电致发光材料,具有优良的性能,已促使有机 电致发光器件进入实用阶段。作者通过分析不同条件下处理的Alq3透过率的变化情况,讨论 了影响Alq3稳定性的主要因素,并对增强Alq3稳定性的方法进行了简单的介绍。 hydroxyquinoline aluminum(Alq_3)is a very significant electroluminescent material. It has attracted great attention both from fundamental and potential application points of view. The variation of permeation ratio of Alq_3 in the different condition is analyzed, and main factors of stability are discussed in the paper. In addition, methods for suppressing the stability of Alq_3 are described.
作者 张麦丽 张方辉
机构地区 陕西科技大学电气与电子工程学院
出处 《陕西科技大学学报（自然科学版）》 2004年第5期133-136,共4页 Journal of Shaanxi University of Science & Technology
关键词 羟基喹啉铝 稳定性 电致发光材料 透过率 hydroxyquinoline aluminum stability permeation ratio
分类号 TB57 [理学—声学]
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  • 1[2]Bailey N, Information Display, 2000, 3:12
  • 2[3]YangY, HeegerAJ. ApplPhysLett, 1994, 64 (10): 1245
  • 3[4]Hatalis, Miltiadis K, Society of Photo- Optical Instrumentation Engineers (SPIE Proceedings. Vol. 3057), Bellingham, WA
  • 4[5]Van Slyke S A, Chen C H, Tang C W. Appl Phys Lett 1996, 69:2160
  • 5[6]ChoongVE, ShiS, CurlessJetal. ApplPhysLett, 1999, 75: 172
  • 6[7]Sakakibara V, Okutsu S, Enokisa T et al. Appl Phys Lett, 1999, 74:2587
  • 7[8]Jian. g X Z, Liu S, Ma H et al. Appl Phys Lett, 2000, 76: 1813
  • 8[10]Tang C W, Vanslyke S A. Appl Phys Lett, 1987, 51: 913
  • 9[11]Gu G, Parthasarathy G, Forrest S R. Appl Phys Lett, 1999, 74:305
  • 10[12]ChaoCL, ChenSA. ApplPhysLett, 1998, 73:426

共引文献61

同被引文献17

  • 1李娜君,路建美,姚社春,王丽华,朱秀林.含偶氮侧基聚酰胺酸的合成及三阶非线性光学性质[J].高分子材料科学与工程,2005,21(1):84-87. 被引量：3
  • 2Franks W A R, Kiik M J, Nathan A. UV-Responsive CCD Image Sensors With Enhanced Inorganic Phosphors Coatings [J]. IEEE Transactions on Electron Devices, 2003, 50 (2): 352- 358.
  • 3Morissey P F, McClandiss S R, Feldman P D, et al. Vacuum- Ultraviolet Quantum Efficiency of a Phosphor Coated Charge- Coupled Device[J]. Appl. Opt., 1994, 33(13):2534-2538.
  • 4Blouke M M, Cowens M W, Hall J E, et al. Ultraviolet Downconverting Phosphor for Use with Silicon CCD Imagers [J]. Appl. Opt., 1980, 19:3318-3321.
  • 5Garbuzov D Z, Bulovi V, Burrows P E, et al. Photoluminescence Efficiency and Absorption of Aluminum-Tris-Quinolate (Alq3) Thin Films[J]. Chemical Physics Letters, 1996, 249: 433-437.
  • 6PRITCHARD H O, NICHOLLS R W, LAKSHMI A. Ultraviolet sensitization of silicon detectors for space astronomicsl applications [J]. Applied Optics, 1979, 18(13): 2085-2085.
  • 7BLOUKE M M, COWENS M W, HALL J E, et al. Ultraviolet downoonverting phosphor for use with silioon CCD imagers [ J ]. Applied Optics, 1980, 19(19): 3318-3321.
  • 8NALETTO G, TONDELLO G, BONANNO G, et al. Response analysis in the 300- to 2500-A spectral range of ultraviolet- enhanced charge-coupled devices [J]. Optical Engineering, 1994, 33(8): 2544-2552.
  • 9MORISSEY P F, MCCLANDISS S R, FELDMAN P D, et al. Vacuum-ultraviolet quantum efficiency of a phosphor-ooated charge- coupled device [J]. Applied Optics, 1994, 33(13): 2534-2538.
  • 10MORRISSEY P F, MCCANDLISS S R, FELDMAN P D. Vacuunvultraviolet quantum efficiency of a thinned, backside- illuminated charge-coupled device [J]. Applied Optics, 1995, 34 (22) : 4540-4650.

引证文献2

陕西科技大学学报（自然科学版）
2004年 第5期

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