摘要
利用 p HEMT工艺设计了一个 Ka波段微波单片低噪声放大器电路。电路采用四级放大的结构形式。利用微带电路实现射频输入、输出和级间匹配。采用多目标优化方法对电路增益、噪声系数、驻波比、稳定系数和输出 1 d B压缩点等特性进行了研究。设计出一个增益大于 2 0 d B,噪声系数小于 1 .0 d B,1 d B压缩点的输出功率在 1 0 d Bm以上 ,性能优异的 LNA。
A Ka band monolithic-microwave integrated-circuit(MMIC) low noise amplifier with PHEMT process is presented. A four-stage structure is used in this circuit. Microstrip line matching network are used for input match, output match and inter-stage matching networks. The properties such as gain, noise figure, VSWR, stability factor and output 1dB compression point are discussed by a multi-purpose optimization method. The Ka band LNA exhibits a gain of 20 dB, noise figure of less than 1.0 dB, output power of 1 dB compression point more than 10 dBm from 33 to 37 GHz.
出处
《电子器件》
CAS
2004年第3期389-392,共4页
Chinese Journal of Electron Devices
基金
国家重点基础研究发展规划 ( 973
G2 0 0 2 CB3 1 1 90 6)资助项目
