10Gb/s 0.18μm CMOS激光二极管驱动器芯片

10 Gb/s 0.18 μm CMOS Laser Diode Driver IC

基于 0 .1 8μm CMOS工艺设计的 1 0 Gb/ s激光二极管驱动器电路。核心单元为两级直接耦合的差分放大器 ,电路中采用了并联峰化技术和放大级直接耦合技术以扩展带宽 ,降低功耗。模拟结果表明 ,在 1 .8V电源电压作用下该电路可工作在 1 0 Gb/ s速率上 ,输入单端峰峰值为 0 .3 V的差分信号时 ,在单端 5 0Ω负载上的输出电压摆幅可达到 1 .4V,电路功耗约为 85 m W。

This paper introduces the design of a laser diode driver at 10 Gb/s circuit which will be fabricated with 0.18 μm CMOS technology. Employing directly-coupled two stages of differential amplifiers, the circuit can amplify the input differential signal amplitude from 0.3 V to 1.4 V on a 50 Ω output resistance at 10 Gb/s with a total power consumption about 85 mW.