摘要
从更深层次——电子在非均匀电磁场中的运动规律 ,探讨了磁控溅射的更一般原理以及磁场的横向不均匀性及对称性是磁约束的本质原因。对工件温升、临界磁场、脱缚电子的能量及原因。
The more general principles of magnetron-sputtering were discussed. The non-uniformity and symmetry of the magnetic field were the main causes of magnetic restriction. Also the increase of the temperature of substrates, critical magnetic field, the energy and cause of escaped electron, the cause of the sputtered lane were analyzed.
出处
《真空》
CAS
北大核心
2004年第4期74-79,共6页
Vacuum
关键词
磁力线走廊
磁阻力
横向磁约束
电子浓度分布
磁控溅射
镀膜
corridor of magnetic line of force
magnetic field resistance
horizontal magnetic restriction
distribution of electron's density
