氧化锌纳米点阵列体系的制备及发光性能

Preparation and Photoluminescence of ZnO Nanodot Array

0引言低维纳米材料(如量子点、量子线)因具有量子尺寸效应和量子限域效应而呈现许多奇异的光、电、磁特性,它在量子点激光器、单电子处理器和高密度存储等领域具有广阔的应用前景[1～4].量子点和量子线是未来量子器件的构造单元,是构筑未来各种纳米器件的基础[5].然而,纳米器件的制备仍是目前一个具有挑战性的研究课题.

A novel nano-masking technique based on porous alumina membrane as mask was developed for preparing ZnO nanodots on Si substrate. The as-deposited nanodots with uniform size were in two-dimensional, regular array, whose regular structure and diameter were closely related to the mask used. Photoluminescence results show that the ZnO nanodot array have a strong UV light emission peak around 380 nm and a wide blue-green light emission peak at 460similar to610 nm at room temperature. The former corresponds to the near band edge emission of the wide band-gap ZnO and the latter could be attributed to the recombination of a photogenerated hole with singly ionized oxygen vacancy.