Pb-Gd合金在硫酸溶液中生长的阳极Pb(Ⅱ)膜的阻抗的研究

Impedance Study of the Anodic Pb(Ⅱ) Film Formed on Pb-Gd and Pb Electrodes in Sulfuric Acid Solution

应用交流伏安法(ACV)和电化学交流阻抗频谱法(EIS)对含稀土元素Gd的Pb Gd(1.0%)合金电极在4.5mol·dm-3的硫酸溶液中和0.9V(vs.Hg/Hg2SO4)电位下生长的阳极Pb(Ⅱ)氧化物膜的阻抗特性进行了研究,并与纯Pb电极进行了比较.结果表明,稀土元素Gd的添加可显著降低阳极Pb(Ⅱ)膜的阻抗,原因在于Gd可抑制膜的生长和增大膜的孔率.

The anodic Pb(Ⅱ) films formed on Pb-Gd(1.0%) and Pb electrodes at 0.9 V (vs. Hg/Hg_2SO_4) in 4.5 mol·dm^(-3) H_2SO_4 solution were studied using ac. voltammetry (ACV) and electrochemical impedance spectroscopy (EIS). The experimental results show that the addition of the rare-earth element Gd into lead metal can effectively reduce the resistance of the anodic Pb(Ⅱ) film. The lower resistance may be mainly due to the growth inhibition and the larger porosity of the film on Pb-Gd alloy.