Si离子注入和H等离子体处理对单晶Si中空腔生长的影响研究

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

室温下首先采用 16 0keVHe离子注入单晶Si样品到剂量 5× 10 16 ions/cm2 ,部分样品再接受80keVSi离子辐照到较高的剂量 5× 10 15ions/cm2 或接受高密度H等离子体处理 .应用透射电镜观测分析了 80 0℃高温退火引起的空腔的形成形貌 .结果表明 ,附加Si离子辐照或H等离子体处理会影响Si中空腔的生长 .就Si离子附加辐照而言 ,由于辐照引入富余的间隙子型缺陷 ,因此 ,它会抑制空腔的生长 ,而高密度H等离子体处理则有助于空腔的生长 .定性地讨论了实验结果 .

Crystalline silicon samples were first implanted at room temperature with 160 keV He ions at a dose of 5×10 16ions/cm 2.Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10 15ions/cm 2,or were co-treated with high density hydrogen plasma.Cross-sectional transmission electronic microscopy(XTEM)was used to study the growth of cavities after the subsequent annealing at 800℃ for 1 hour.Our results clearly show that both the Si implant and plasma hydrogenation can influence the growth of cavities in Si.In Si ion co-implanted sample,the cavities were found to shrink due to the presentation of excess of interstitial-like defects.However,additional plasma hydrogenation leads to enhancement in cavity growth.The results were qualitatively discussed.