量子阱中电子自旋注入及弛豫的飞秒光谱研究

Femtosecond spectral studies of electron spin injection and relaxation in AlGaAs /GaAs MQW

采用飞秒脉冲的饱和吸收光谱方法研究了GaAs AlGaAs多量子阱中电子自旋的注入和弛豫特性 ,测得电子自旋极化弛豫时间为 80± 1 0ps.说明了电子自旋 轨道耦合相互作用引起局域磁场的随机化 。

The electron spin injection and relaxation in AlGaAs/GaAs multi quantum well(MQW) are studied with femtosecond saturation absorption measurements. A electron spin relaxation time of 80±10ps is deduced. The relaxation mechanism is attributed to the randomization of the local magnetic field arising from the spin orbit coupling.