单晶硅氩离子注入层的微观结构和微观摩擦磨损行为

Micro-Wear Mechanism and Micro-structure of Argon Implanted Single-crystal Silicon

利用离子注入技术对单晶硅表面进行了氩离子注入,用微摩擦磨损实验机研究了改性层的摩擦磨损行为,并用透射电子显微镜研究了改性层的微观结构.结果表明:经过一定剂量的氩离子注入后单晶硅的耐磨性能较注入前有了一定的提高,其中以注入剂量1×1016ions/cm2为最好,氩离子的注入使单晶硅表面形成了硅的微晶态与非晶态共存的混和态结构的改性层,使其具有良好的抗塑变和塑性剪切能力,从而改善了单晶硅的抗磨能力.

The micro-tribological and nano-mechanic properties of Ar^+ implanted single-crystal silicon were investigated by using a Micro-tribology Text and a Nano Indenter System, The results show that Ar^+ implantation of single-crystal silicon had increased the wear-resistance, the best dose is 1×10^(16) ions /cm^2. The mixed structure of micro-crystal and amorphous silicon is formed on the surface of single-crystal silicon. This contributes to increase the ability to resist plastic shear and raise the anti-wear ability of single-crystal silicon.