硅掺杂半导体立方氮化硼单晶的制备

Preparation of Semiconductor Cubic Boron Nitride Crystalline with Silicon diffusion

本文采用扩散的方法实现了立方氮化硼的硅掺杂 ,分析了扩散温度、时间对其电阻的影响。实验结果表明 :在扩散的初始时段 ,立方氮化硼的电阻下降很快 ;而随着掺杂时间的增加 ,电阻变化趋缓 ,说明掺杂浓度随时间增加将出现饱和现象。另外 ,当扩散温度增加时 ,立方氮化硼的电阻也随之下降 ,即较高的温度有利于获得较高的掺杂浓度。

In this paper, a new method was developed to prepare n -t ype semiconductor cubic boron nitride (cBN) by silicon vapor diffusion. The expe rimental results shown that at the beginning of the Si diffusion, the resistance of the cBN decreased soon. As the time going, the resistance decreased slowly. This phenomenon means that the concentration of Si in cBN is near to a constant as the time increasing. On the other hand, the resistance of Si doped cBN decrea sed with the temperature of diffusion increased. This means that higher temperat ure is beneficial for higher concentration of Si in cBN.