摘要
提出了在开发一种先进的直拉法晶体生长控制系统中占据重要地位的设备及工艺特征的下位机模型;分析所采集到的实验数据,揭示出控制中的重要问题,由此开发了一种新的控制结构;该模型是建立在常规控制结构和提出新的控制结构性能对比的基础上。
A low order model is presented that captures important equipment and process characteristics for development of anadvanced control system for Czochralski crystal growth. Analysis of experimental data sets reveals important control issues, leading to development of a new control structure. A model based performance comparison of the conventional and proposed control structure is presented. @ 2001 Elsevier Science B.V. All rights reserved.
出处
《电子工业专用设备》
2004年第10期58-63,共6页
Equipment for Electronic Products Manufacturing
关键词
计算机模拟
控制系统设计
生长模型
热传递
直拉法
半导体Si
Computer simulation
Control system design
Growth models
Heat transfer
Czochralski method
Semiconducting siliconK): C0, M0, Y0,
