摘要
利用 MOD法在电阻率为 5～ 6Ω· cm的 n- Si(10 0 )衬底采用旋转甩膜工艺制备了 Sm0 .85Bi3.1 5Ti3O1 2(SBT- 0 .85 )铁电薄膜 ,研究了薄膜的结晶性能和电学性能。结果表明 ,在 70 0°C下退火 1h得到的 Sm0 .85Bi3.1 5Ti3O1 2 薄膜具有良好的铁电、介电和绝缘性能。在± 5 V的范围内 ,电容 -电压 (C- V)曲线记忆窗口宽度为 3.6 V;在室温 10 0 0 k Hz下 ,其介电常数为 4 5 ,介电损耗为 0 .0 4 ;在 3V电压下 ,薄膜的漏电流为 3× 10 - 8A。
Sm_(0.85)Bi_(3.15)Ti_3O_(12) thin films were prepared on n-Si (100) substrate by MOD method. The crystalline and electric properties of this thin film have been discussed. Sm_(0.85)Bi_(3.15)Ti_3O_(12) thin films crystallized at 700 °C showed good ferroelectric,dielectric and insulation characteristics. The memory window in C-V curve (at the applied voltage range of ±5 V) is 3.6 V; the dielectric constant and loss are 45, 0.04 respectively at room temperature and 1 000 kHz; the leakage current is 3.8×10^(-8) A/cm^2 at the voltage of 3 V.
出处
《压电与声光》
CSCD
北大核心
2004年第5期408-410,共3页
Piezoelectrics & Acoustooptics
