摘要
提出了一种采用低能量大剂量 He离子注入局域寿命控制的高速 L IGBT,并对其进行了实验研究 .粒子辐照实验结果显示与常规的 L IGBT相比较 ,该器件的关断时间和正向压降的折中关系得到了改善 .同时研究了当局域寿命控制区位于 p+ - n结附近 ,甚至在 p+阳极内时 ,该器件的正向压降和关断时间 .结果显示当局域寿命控制区在p+ 阳极内时 。
A high speed LIGBT with localized lifetime control by using high dose and low en ergy helium implantation(LC-LIGBT) is proposed.Compared with conventional LIGB Ts,particle irradiation results show that trade-off relationship between turn- off time and forward voltage drop is improved.At the same time,the forward volta ge drop and turn-off time of such device are researched,when localized lifetime control region place near the p+-n junction,even in p+ anode.The results s how for the first time,helium ions,which stop in the p+ anode,also contribute to the forward voltage drop increasing and turn-off time reducing.
