摘要
The high temperature (300 ～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabr icated by low-pressure chemical vapor deposition on Si (100) substrates are inv estigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage char acteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data meas ured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.
研究了低压化学气相淀积方法制备的 n- 3C- Si C/p- Si(10 0 )异质结二极管 (HJD)在 30 0～ 4 80 K高温下的电流密度 -电压 (J- V)特性 .室温下 HJD的正反向整流比 (通常定义为± 1V外加偏压下 )最高可达 1.8× 10 4 ,在 4 80 K时仍存在较小整流特性 ,整流比减小至 3.1.在 30 0 K温度下反向击穿电压最高可达 2 2 0 V .电容 -电压特性表明该 Si C/Si异质结为突变结 ,内建电势 Vbi为 0 .75 V.采用了一个含多个参数的方程式对不同温度下异质结二极管的正向 J-V实验曲线进行了很好的拟和与说明 ,并讨论了电流输运机制 .该异质结构可用于制备高质量异质结器件 ,如宽带隙发射极 Si C/Si
基金
国家重点基础研究专项基金 ( No.G2 0 0 0 0 683 )
国家高技术研究与发展计划 ( No.2 0 0 1AA3 110 90 )资助项目~~
