摘要
研究了 Al Ga As层掺 1%的 In对 Al Ga As/Ga As量子阱光致发光谱的半峰宽的影响 .2 5 K的光致发光结果表明 ,In作为表面活化剂能有效改善 Al Ga As/Ga As异质界面的粗糙度 .将此方法应用到反型 Al Ga As/Ga As高电子迁移率晶体管 (HEMT)材料结构中 ,Hall测量表明该方法能有效提高反型
Effects of In doping on the optical properties of AlGs/Gs quantum wells (QWs ) and the electrical properties of inverted AlGs/Gs high electron mobility t ransistors (HEMTs) are investigated.It is found that a little In incorporation i n AlGs layers can decrease the photoluminescence linewidths of AlGs/Gs QWs drastically and a little In doping in AlGs layer can significantly increase t he electron mobilities of inverted AlGs/Gs HEMTs at 77K.All these results de monstrate that In doping can reduce the interface roughness due to In as a surfa ctant which can enhance the surface migration of Al adatoms during molecular bea m epitaxy.
关键词
量子阱
高电子迁移率晶体管
界面粗糙度
光致发光
表面活化剂
quantum wells
high electron mob ility transistor
interface roughness
photoluminescence
surfactant
