钨丝掩模大角度倾斜离子注入850nm垂直腔面发射激光器及其高频调制特性

850nm Vertical Cavity Surface Emit ting Laser Fabricatedby Large Inclined Angle Ion Implantation UsingTungsten as Mask and Its Modulat ion Character

采用钨丝掩模技术 ,通过调整制作过程中的工艺参数 ,研制出批量器件阈值在 2 m A以内 ,最低阈值为1.2 5 m A的 85 0 nm垂直腔面发射激光器 .同时对 TO封装的器件进行了高频特性测试 ,结果表明 3d B带宽最高为4 .0 GHz,在应用于光通信收发模块的商品化同类器件中处于较好的水平 ,适合中。

By optimizing the technology parameters,850nm vertical cavity surface emitting laser is fabricated by large i nclined angle implantation using tungsten as mask,which is continuous operating at room temperature.The threshold current is lowest to 1.25mA.The light output power is about 0.92mW.The modulation performance of the device in TO package in dicated that the -3dB bandwidth is 4.0GHz,which can be applied in middle and h igh-speed optical communication.