摘要
采用同步辐射单色光形貌术观察了 6H SiC单晶中的微管缺陷 ,发现晶片中Burgers矢量为 1c的螺位错具有较高的密度。此外 ,还观察到对应较大Burgers矢量的微管。基于微管附近的应变场 ,并根据衍射几何 ,模拟计算了一系列具有不同Burgers矢量的微管在形貌像中的直径 。
Micropipes in 6H-SiC monocrystalline were observed by synchrotron radiation X-ray topography. A large number of 1c screw dislocations were found in this wafer. In addition, micropipes with huge Burgers vectors were also observed. Based on the strain field around the micropipe and the diffraction geometry, the diameters of micropipes with different Burgers vectors in topograph were simulated. The calculated values are in good agreement with the experimental observation.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2004年第3期332-334,共3页
Journal of Synthetic Crystals
基金
国家自然科学基金 (No 60 0 2 5 0 49)
863计划资助项目
关键词
6H-SIC
同步辐射单色光形貌术
半导体材料
晶格常数
synchrotron radiation monochromatic X-ray topography
6H-SiC monocrystalline
micropipe
simulation