Nd:LuVO_4晶体的生长及其性能研究

Growth and Some Properties of Nd:LuVO_4 Crystal

采用提拉 (Czochralski)法生长了Nd :LuVO4晶体。利用液相反应法 ,以V2 O5和NH4OH生成NH4VO3 ,Nd2 O3 、Lu2 O3 和HNO3 生成Nd(NO3 ) 3 和Lu(NO3 ) 3 反应制备多晶料 ;所生长Nd0 .0 1Lu0 .99VO4晶体为 16× 2 0× 2 1mm3 ,质量超过 4 0g。以X射线荧光分析仪测得其生长中各主要元素的分凝系数。其中Nd3 + 约为 0 .91,V3 + 和Lu3 + 接近 1。还测定了其介电常数ε11=2 7.2 ,ε3 3 =33.9(30℃ ,1kHz) 。

Nd:LuVO_4 single crystal was grown by Czochralski method. Polycrystalline Nd:LuVO_4 starting material was prepared by the solution reactions of NH_4VO_3 with either Nd(NO_3)_3 or Lu(NO_3)_3, which were obtained from respective oxide reacted with NH_4OH or HNO_3. The as-grown Nd_(0.01)Lu_(0.99)VO_4 single crystal sized 16×20×21 mm^3 weighted more than 40g. The effective segregation coefficients were measured to be (0.91) for Nd^(3+) and near 1 for V^(3+) and Lu^(3+) during crystal growth by means of X-ray fluorescence. The dielectric constants ε_(33) and ε_(11) were determined to be 27.2 and 33.9 (30℃,1kHz) respectively. The crystal quality was observed with synchrotron white beam X-ray topography.