蓝宝石衬底的化学机械抛光技术的研究

Research of Chemical Mechanical Polishing Technique of Sapphire Substrate

介绍了蓝宝石衬底的化学机械抛光工艺 ,概述了化学机械抛光原理和设备 ,讨论分析了影响蓝宝石衬底化学机械抛光的因素 ,阐述了CMP的主要发展趋势 :能定量确定最佳CMP工艺 ,系统地研究CMP工艺过程参数 ,建立完善的CMP理论模型 ,满足不同的工艺要求和应用领域 ,有效降低成本 。

Chemical mechanical polishing (CMP) technique of sapphire substrate was introduced in this paper. CMP theory and equipment were summarized.The factors that influence polishing rate and quality were emphatically discussed. The trends of CMP are as follows: CMP technology could be quantified, process parameters could be systematically studied, perfect CMP theory model could be established to meet different technological demands and applying fields, to reduce cost and enhance output.