p型GaN欧姆接触的研究进展

Research and progress of ohmic contact to p-type GaN

宽带隙的GaN作为半导体领域研究的热点之一,近年来发展得很快。p型GaN的欧姆接触问题一直阻碍高温大功率GaN基器件的研制。本文讨论了金属化方案的选择、表面预处理和合金化处理等几个问题,回顾了近年来p型GaN欧姆接触的研究进展。

The wide-bandgap GaN has been extensively investigated and developed rapidly in recent years. But difficulty in obtaining low-resistance ohmic contacts to p-type GaN blocks the development of high temperature, high power GaN-based devices. Choice of metallization scheme, surface pretreatment and alloying process are discussed. The progress of ohmic contacts to p-type GaN are reviewed.