MOS器件中的等离子损伤

Plasma process Induced damage to MOSFET device

随着栅极氧化膜的减薄,等离子对氧化膜的损伤(PlasmaProcessInducedDamage,P2ID)越来越受到重视。它可以使MOS器件的各种电学参数发生变化,从而影响器件的性能。本文详细介绍了等离子损伤引起的机理、表征方法以及防止措施。

With the continued decrease in the thickness of gate oxide to enhance the device performance , plasma process induced damage (P2ID) is becoming more of a concern. P2ID can degrade all the electrical properties of a gate oxide which include the fixed oxide charge density , the interface state density, the leakage current and the various breakdown related parameters. This paper describes the mechanisms, the character-rization methods and the protection solutions of P2ID.