摘要
研究出高优值系数的P型和N型赝三元系Bi_2Te_3-Sb_2Te_3-Sb_2Se_3半导体致冷材料,在室温附近最高优值可达到3.2×10^(-3)/K以上。讨论了晶体结构特点和生长条件对材料温差电特性的影响。
The high figure of merit p-type and n-type pseudo-ternary Bi_2Te_3-Sb_2Te_3-Sb_2Se_3 Semiconductor cooling materials, which give the highest figure of merit of 3.2×10^(-3)/K at near room temperature, have been developed. The distinguishing feature of crystalline structure and the effect of growth conditions on the thermoelectric properties of matrial also discussed.
出处
《哈尔滨师范大学自然科学学报》
CAS
1993年第4期27-31,共5页
Natural Science Journal of Harbin Normal University
关键词
区熔法
赝三元系
半导体
制冷材料
Pseudo—ternary semiconductor cooling material
Zone melting
