介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

Effects of charging at dielectric surfaces on the characteristics of the sheath for plasma immersion ion implantation

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺 ,采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响 .数值模拟结果表明 :随着等离子体密度的增高 ,表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加 。

Using the one_dimensional dynamic sheath model, the effects of charging at a planar dielectric surface in plasma immersion ion implantation are studied. The temporal evolution of the sheath thickness, the effective potential at the surface of the dielectric and the ion dose accumulated on it are obtained for different plasma densities and dielectric thicknesses. The numerical results demonstrated that due to the charging effects, the plasma density has a profound impact on doping result during plasma immersion ion implantation, but the thickness of the dielectric has no significant effect on it.