Cu掺杂氧化锌薄膜的发光特性研究

Photoluminescent properties of Cu-doped ZnO thin films

通过射频反应溅射法在Si(1 1 1 )衬底上制备了不同Cu掺杂量的ZnO薄膜 .室温下测量了样品的光致发光 (PL)谱 ,所有样品的PL谱中均观察到 4 35nm左右的蓝光发光带 ,该发光带的强度与Cu掺杂量和溅射功率有关 .当溅射功率为 1 5 0W ,Cu掺杂量为 2 5 %时 ,ZnO薄膜的PL谱中出现了较强的蓝光双峰 ,而溅射功率为 1 0 0W ,Cu掺杂量为1 5 %时 ,出现了位于 4 37nm(2 84eV)处较强的蓝光峰 ,后者的取向性较好 .还研究了掺杂量和溅射功率对发光特性的影响 。

Zinc oxide films doped with various contents of copper were deposited on silicon (111) substrates by rf reactive sputtering. The photoluminescent(PL) spectra of the ZnO films were measuered at room temperature. Results showed that each of the samples had a blue band at about 435?nm (2 85?eV) and the intensities of these blue bands were changed with the variation of content and sputtering power. It was observed that there is a stronger blue bi peak when the power reaches 150?W and the copper content is equal to 2 5%, and there is a stronger blue peak at 437?nm when the power was 100?W and copper content is 1 5% on the PL spectra of ZnO films, the latter had a good c axis orientation. We have investigated the PL properties for various Cu doped contents and different sputtering powers, and the mechanism of blue emission was also discussed in this paper.