GaN基蓝光发光二极管的波长稳定性研究

A study on wavelength stability of GaN-based blue light emitting diodes

尽管GaN基蓝绿光发光二极管 (LED)已进入大规模商品化阶段 ,但其发光波长随注入电流的变化仍是一个尚未解决的关键技术难题 .同时 ,蓝绿光LED电注入发光光谱的半高全宽多为 2 5nm以上 .通过优化LED器件材料的生长条件和总应变量 ,获得了高质量的InGaN GaN多量子阱LED外延片 .由此制作的LED器件在 0— 1 2 0mA的注入电流下 ,发光波长变化小于 1nm .在 2 0mA的正向电流下 ,其光谱半高全宽只有 1 8nm 。

Although GaN based blue and green light emitting diodes (LEDs) have already been commercialized,the variation of the electro luminescence wavelength of the LEDs along with the injection current remains a major problem. Furthermore, the full width at half maximum (FWHM) of the emission spectrum of the LEDs is relatively broad (typically greater than 25?nm). In this paper, high performance LEDs with InGaN/GaN multiple quantum wells were grown and fabricated by optimizing the growth conditions and the total strain in the structure. The emitting wavelength of our LEDs remains stable within 1?nm as the forward current varies from 0 to 120?mA. At a forward current of 20?mA, the FWHM of the emission spectrum is as low as 18?nm and remains basically constant as the forward current varies.