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生长气氛和速度在金红石(TiO_2)单晶体生长中的作用研究(英文) 被引量:11

Study on Effect of Growth Atmosphere and Rate on Preparation of Rutile (TiO_2) Single Crystal
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摘要 本文研究了生长气氛和生长速度在焰熔法金红石单晶体生长中的作用 ,对比了晶体在空气中与在氧气中退火的结果 ,测定了晶体试样的摇摆曲线和透过率。研究表明 :金红石单晶体的生长受炉膛气氛、生长界面温度和生长速度的影响 ;炉膛气氛决定晶体能否形成 ,是关键因素 ;炉膛气氛中的氧分压大于液固界面 (即生长界面 )处熔体的氧离解压是生长完整晶体的前提条件 ;晶体在退火过程中消除热应力 ,但更重要的是通过氧化反应消除氧空位 ,在氧气氛中退火 ,可明显缩短退火时间。在所优化的实验条件下制备的晶体 ,完整性较好 ,透过率为 70~ 72 % ,与商用晶体的透过率基本一致。 The effect of growth atmosphere and rate on the preparation of rutile single crystal in the flame fusion method was mainly studied in this paper. The annealed result in air was compared with it in oxygen. Swing curve and transmissivity of the sample were measured. It was made clear that crystal growth is influenced by chamber atmosphere, temperature at the liquid-solid interface and growth rate, and that the chamber atmosphere is an essential factor on whether crystal could be formed or not. To form a perfect crystal it's a necessary condition that the partial pressure of oxygen at the liquid-solid interface is higher than its decomposed pressure. The role of annealing is to relieve thermal stress formed in crystal growth. However, the more important role of annealing is the oxidization reaction to eliminate oxygen vacancies .The annealing time could be considerably shortened in oxygen. The crystal grown in the optimal experimental condition has good perfection and it's transmissivity is 70-72%, close to commercial crystal.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2004年第4期657-661,共5页 Journal of Synthetic Crystals
基金 theNationalNaturalScienceFoundationofChina (No.50 372 0 0 9)
关键词 生长气氛 生长速度 焰熔法 金红石单晶体 TiO2 氧化钛 摇摆曲线 透过率 晶体生长 rutile crystal growth flame fusion method swing curve
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参考文献10

  • 1[1]Rutie-Optical Grade TiO2 Single crystal [EB/OL]. http://www.mticrystal.com, 2004-02-02.
  • 2[2]Mikio Higuchi, et al. Floating-zone Growth of Rutile Single Crystals Inclined at 48℃ to the c-axis[J]. Journal of Crystal Growth, 2000,208:501-507.
  • 3[3]Kazuhito Hatta, Mikio Higuchi, Junichi Takahashi, Kohei Kodaria. Floating-zone Growth and Characterization of Aluminum-doped Rutile Single Crystals [J]. Journal of Crystal Growth,1996,163:279-284.
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  • 5[5]Mikio Higuchi, et al. Effects of Sc2O3 Addition on Floating Zone Growth of Rutille Single Crystals[J]. Journal of Crystal Growth,1992,125:571-575.
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二级参考文献7

  • 1Kazuhito Hatta, Mikio Higuchi, Junichi Takahashi, Kohei Kodaria. Floating Zone Growth and Characterization of Aluminum-doped Rutile Single Crystals [J]. Journal of crystal growth,1996,163:279-284.
  • 2Mikio Higuchi, Kohei Kodaria. Effect of ZrO2 Addition on FZ Growth of Rutile Single Crystal[J]. Journal of Crystal Growth,1992,123;495-499.
  • 3Mikio Higuchi, et al. Effects of Sc2O3 Addition on Floating Zone Growth of Rutille Single Crystals[J]. Journal of Crystal Growth,1992,125;571-575.
  • 4Mikio Higuchi, et al. Growth of Rutile Single Crystals by Floating Zone Method[J]. Journal of Crystal Growth,1991,112;354-358.
  • 5Hagfeldt A, Siegbahn H, Lindguist S, Lunell S. Semiempirical Calculations of TiO2 (rutile) Cluster[J].International Journal of Quantum Chemistry,1992,44:477-495.
  • 6张克从.近代晶体学基础[M].科学出版社,1987..
  • 7Mikio Higuchi, et al. Floating-zone Growth of Rutile Single Crystals Inclined at 48° to the C-axis[J]. Journal of Crystal Growth,2000,208:501-507.

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