电场增强载流子的产生研究

A Study of Field-Enhanced Carrier Generation in Pulsed MOS Capacitors

本文研究了脉冲MOS电容器中的电场增强载流子产生.深能级中心的载流子发射几率对电场的依赖性采用Poole-Frenkel模型.我们得出了产生电流密度与产生宽度之间的一般关系.通过选择合适的参数,可以使理论结果与实验测量之间在整个测量范围内相当好地符合.关于温度对电场增强载流子产生特性的理论预言也被实验结果所证实.

A study of field-enhanced carrier generation in pulsed MOS capacitors is made. One-dimension Poole-Frenkel model is used to the carrier emission probability; dependent on the applied electrical field. A general relationship between generation current density and generating width is obtained. In the condition of choosing suitable parameter the theoretical result may be consistent with experimental measurement through all measuring range. The theoretical forecast with regard to the influence of temperature on field-enhanced carrier generation character is also verified by the experiments.