摘要
本文建议子一种由两个不同电压扫描率下的饱和电容值确定产生寿命的实验方法。由于这一实验方法只涉及不同电压扫描率下产生区宽度之差,因此无论使用Pierret的改进的产生区宽度模型或是使用简单的Zerbst模型都将给出同样的产生寿命值。实验结果表明,对于同一个MOS电容器样品,从不同电压扫描率组合得到的产生寿命值基本一致。
An experimental method to determine minority carrier generation lifetime from the values of saturation capacitance under two different voltage sweep rates has been presented. Since only the difference between generation region widthes under two different voltage sweep rates is touched upon in this method,the same value of generation lifetime will be obtained whether the model for generation region width used in determination is improved Pierret's model ,or simple Zerbst's model. The experimental results show that for the same MOS capacitor sample the obtained values of generation lifetime from varying association of voltage sweep rates are close each other.
出处
《杭州大学学报(自然科学版)》
CSCD
1993年第4期425-428,共4页
Journal of Hangzhou University Natural Science Edition
基金
国家自然科学基金资助
关键词
产生区宽度
MOS电容器
半导体
generation region width
MOS capacitor
semiconductor