摘要
用CEMS方法对掺锑的SnO_2气敏薄膜作了研究。该材料对H_2、CO的气敏响应取决于掺锑浓度(x％)和退火温度。实验发现:样品的CEMS参量同质异能移和四极分裂分布宽度在x=1％时为最小值,正好与气敏响应灵敏度达最大值相一致。由此进一步讨论了气敏薄膜的敏感机理。
Sn Mb'ssbauer spectra for the surface layer of Sb doped SnO2 thin film have been obtained by using CEMS method. The gas- sensing response of these films for H2 and CO depends on concentration of doped Sb(x%) and annealing temperature . It is found that when x = 1% the CEMS parameters of samples δ(IS) and σ△ (QS's distribution width) reach minima while the gas sensing sensitivity reachs maximum. The gas sensitive mechanism is discussed.
出处
《核技术》
CAS
CSCD
北大核心
1993年第8期492-495,共4页
Nuclear Techniques
基金
国家自然科学基金
关键词
锑
穆斯堡尔谱法
气敏材料
氧化锡
CEMS Backscattering method Sb doped SnO2 Gas sensitive mechanism
