摘要
介绍了在77K的低温条件下复合薄膜电气强度的测试方法,研究了聚酰亚胺／蒙脱土、聚酰亚胺／云母、聚酰亚胺／SiO23个系列的低温电气强度,分析了填料含量等因素对薄膜电气强度的影响。研究结果表明:前两个系列填料对电气强度的影响趋势相同,均存在最佳填料含量,聚酰亚胺／蒙脱土系列电气强度最佳可达215.77MV／m;而聚酰亚胺／SiO2系列,电气强度比纯PI薄膜略有下降,且含量较高时下降明显,但仍然可以满足应用的要求。
In this paper,a method for measuring cryogenic dielectric strength of insulating polyˉmer films has been introduced.The dielectric strength of polyimide/montmorillonite(PI/MMT),polyimide/mica(PI/mica),polyimide/SiO 2 (PI/SiO 2 )nanocomposite films was measured and studˉied at77K.The results showed that montmorillonite and mica fillers have similar effects on the dielectric strength and an optimal filler content exists for both PI/MMT and PI/mica systems.For PI/MMT system,the highest dielectric strength is215.77kV/mm,while for PI/SiO 2 system the dielectric strength is a little lower than for pure polyimide and decreases with increasing filler content,and still satisfies the requirement for practical applications.
出处
《绝缘材料》
CAS
北大核心
2004年第5期19-22,共4页
Insulating Materials
基金
北京市科委重大项目(编号:H020420020230)。
